Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix-Reference-Cited by-同舟云学术

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Nanostructures formed by sub- and close-to-critical Ge inclusions in a Si matrix

Published:2003-04 Issue: Volume:17 Page:131-133
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Cirlin George E.,Talalaev Vadim G.,Egorov Vyatcheslav A.,Zakharov Nikolai D.,Werner Peter,Ledentsov Nikolai N.,Ustinov Victor M.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix

2. Structure and optical properties of Ge/Si superlattice grown at Si substrate by MBE at different temperatures

3. Photoluminescence investigation on growth mode changeover of Ge on Si(100)

4. Self-assembling SiGe and SiGeC nanostructures for light emitters and tunneling diodes

5. Effect of overgrowth temperature on the photoluminescence of Ge/Si islands

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-IR photoluminescence from Si/Ge nanowire-grown silicon wafers: effect of HF treatment;Applied Physics A;2013-05-29

2. Si/Ge multilayer structures for optoelectronic applications;SPIE Proceedings;2005-08-03

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