(In,Ga)As islands formed on shallow patterned GaAs substrates by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference12 articles.
1. Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
2. Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates
3. Surface migration induced self‐aligned InAs islands grown by molecular beam epitaxy
4. Strain-engineered self-assembled semiconductor quantum dot lattices
5. Site-controlled InAs single quantum-dot structures on GaAs surfaces patterned by in situ electron-beam lithography
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1. InAs/GaAs(001) wetting layer formation observed in situ by concurrent MBE and STM;Surface Science;2009-12
2. Guided quantum dot ordering by self-organized anisotropic strain engineering and step engineering on shallow-patterned substrates;Journal of Crystal Growth;2007-04
3. Island coarsening in one-dimensional models with partially and completely reversible aggregation;Physica A: Statistical Mechanics and its Applications;2007-03
4. Self-Organized Quantum Dot Superstructures for Nanoelectronic and Optoelectronic Applications;Journal of Nanoelectronics and Optoelectronics;2006-08-01
5. Localized formation of InAs quantum dots on shallow-patterned GaAs(100);Applied Physics Letters;2006-06-05
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