Surface morphology and optical property of In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE-Reference-Cited by-同舟云学术

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Surface morphology and optical property of In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Published:2003-04 Issue: Volume:17 Page:114-116
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Lan Q,Niu Z.C,Zhou D.Y,Kong Y.C,Wang X.D,Miao Z.H,Feng S.L

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference4 articles.

1. 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots

2. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

3. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure

4. Influence of InxGa1-xAs (0≤x≤0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The impact of AsH3 overflow time and indium composition on the formation of self-assembled InxGa1 − xAs quantum dots studied by atomic force microscopy;Journal of Theoretical and Applied Physics;2013

2. AFM, HR-XRD AND PL CHARACTERIZATION OF STACKED STRUCTURES In0.5Ga0.5As/GaAs QUANTUM DOTS;Nano;2010-04

3. Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer;Chinese Physics Letters;2003-11

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