Photoluminescence of Self-Assembled InAs/GaAs Quantum Dots Covered by InAlAs and InGaAs Combination Strain-Reducing Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. GaAs-based long-wavelength lasers
3. Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers
4. Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristics
5. Temperature dependence of gain saturation in multilevel quantum dot lasers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. White light emitting diode based on quantum dots and MEH-PPV;Acta Physica Sinica;2016
2. Effect of the InAlAs and InGaAs combination strain-reducing layer on 1.3 µm emission self-assembled InAs/GaAs quantum dots;Journal of Physics D: Applied Physics;2004-03-18
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