Photoluminescence linewidth narrowing of InAs/GaAs self-assembled quantum dots
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers
2. Quantum dot lasers: breakthrough in optoelectronics
3. Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm
4. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
5. Effects of growth interruption on self-assembled InAs/GaAs islands
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1. Influence of the Arsenic Pressure during Rapid Overgrowth of InAs/GaAs Quantum Dots on Their Photoluminescence Properties;Crystals;2023-09-08
2. Effect of bismuth surfactant on the structural, morphological and optical properties of self-assembled InGaAs quantum dots grown by Molecular Beam Epitaxy on GaAs (001) substrates;Journal of Alloys and Compounds;2022-06
3. Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure;Journal of Luminescence;2017-12
4. Investigation of the thermal photocarrier interaction–recombination in ZnO nanostructures fabricated by the hydrothermal method;Journal of Luminescence;2017-10
5. Increased InAs quantum dot size and density using bismuth as a surfactant;Applied Physics Letters;2014-12-22
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