Increased InAs quantum dot size and density using bismuth as a surfactant
Author:
Affiliation:
1. Microelectronics Research Center, The University of Texas at Austin, Texas 78758, USA
2. Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA
Funder
National Science Foundation (NSF)
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4904825
Reference41 articles.
1. Low threshold, large To injection laser emission from (InGa)As quantum dots
2. Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
3. Molecular beam epitaxial growth and characteristics of 1.52 μm metamorphic InAs quantum dot lasers on GaAs
4. High temperature operation of quantum dots-in-a-well infrared photodetectors
5. Formation of InAs quantum dots at ultrahigh growth rates
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