Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Hot electrons in a GaAs heterolayer at low temperature
2. Electron-phonon interaction in a very low mobilityGaAs/Ga1−xAlxAsδ-doped gated quantum well
3. D. Vasileska, J. Vac. Sci. Technol., in press.
4. A fundamental noise limit for biased resistors at low temperatures
5. Energy relaxation of two-dimensional carriers in strained Ge/Si0.4Ge0.6 and Si/Si0.7Ge0.3 quantum wells: Evidence for two-dimensional acoustic phonons
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