Energy relaxation studies in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As two-dimensional electron gases and quantum wires
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Hot electrons in a GaAs heterolayer at low temperature
2. Electron-phonon interaction in a very low mobilityGaAs/Ga1−xAlxAsδ-doped gated quantum well
3. Electron-phonon scattering rates in GaAs/AlGaAs 2DEG samples below 0.5 K
4. Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure
5. A fundamental noise limit for biased resistors at low temperatures
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