Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide-Reference-Cited by-同舟云学术

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Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide

Published:2001-02 Issue:1-3 Volume:4 Page:201-204
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Dkaki M.,Calcagno L.,Makthari A.M.,Raineri V.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Physics of Amorphous Silicon–Carbon Alloys

2. Hydrogenated Amorphous Silicon Based Alloy: a-Si_1-xC_x:H

3. SiC devices: physics and numerical simulation

4. Optimum semiconductors for high-power electronics

5. Electrical properties of ion‐implantedp‐njunction diodes in β‐SiC

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1. Influence of Supersaturation on Growth Behavior and Mechanical Properties of Polycrystalline 3C-SiC on W Wire Substrate;Metals;2022-05-23

2. Highly crystalline silicon carbide of controlled mesoporosity;Materials Chemistry and Physics;2020-08

3. Microstructure and mechanical property of high growth rate SiC via continuous hot‐wire CVD;Journal of the American Ceramic Society;2019-03-30

4. Phosphorus diffusion in nanocrystalline 3C-SiC;Applied Physics Letters;2015-03-30

5. Silicon nanocrystals in carbide matrix;Solar Energy Materials and Solar Cells;2014-09

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