High-resolution X-ray diffraction study of strained InGaAsP/InP multiple quantum well structures grown using all solid sources
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
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1. Optical and electrical characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cell incorporated with InGaAs/GaAs QD layers in the middle cell;Progress in Photovoltaics: Research and Applications;2015-02-23
2. InGaAsP/InP long wavelength quantum well infrared photodetectors;Thin Solid Films;2007-03
3. Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE;Semiconductor Science and Technology;2006-05-16
4. Doping effect on the intermixing in GaInAsP/InP multiple quantum well structures grown using all solid sources;Journal of Crystal Growth;2004-08
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