Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures
2. Large bandgap energy control of multiple quantum wells selectively grown by low-pressure MOVPE
3. Narrow-stripe selective growth of high-quality MQWs by atmospheric-pressure MOVPE
4. Low threshold and high uniformity for novel 1.3-/spl mu/m-strained InGaAsP MQW DC-PBH LDs fabricated by the all-selective MOVPE technique
5. 1.3-/spl mu/m AlGaInAs strain compensated MQW-buried-heterostructure lasers for uncooled 10-gb/s operation
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