Precursor mutual interactions in the kinetics of MOCVD of SBT films-Reference-Cited by-同舟云学术

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Precursor mutual interactions in the kinetics of MOCVD of SBT films

Published:2002-06 Issue:2-3 Volume:5 Page:167-171
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Condorelli G

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineering of molecular architectures of β-diketonate precursors toward new advanced materials;Coordination Chemistry Reviews;2007-07

2. STRONTIUM BISMUTH TANTALATE THIN FILM DEPOSITION BY LIQUID-DELIVERY MOCVD USING NOVEL LIQUID BISMUTH PRECURSORS;Integrated Ferroelectrics;2006-11

3. Epitaxial growth of ferroelectric oxide films;Progress in Crystal Growth and Characterization of Materials;2006-09

4. Metal-Organic Chemical Vapor Deposition of Ferroelectric SrBi2Ta2O9 Films from a Fluorine-Containing Precursor System;Chemistry of Materials;2006-01-28

5. Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi2Ta2O9-based ferroelectric capacitors;Journal of Applied Physics;2005-09

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