Metal-Organic Chemical Vapor Deposition of Ferroelectric SrBi2Ta2O9 Films from a Fluorine-Containing Precursor System-Reference-Cited by-同舟云学术

Metal-Organic Chemical Vapor Deposition of Ferroelectric SrBi2Ta2O9 Films from a Fluorine-Containing Precursor System

Published:2006-01-28 Issue:4 Volume:18 Page:1016-1022
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Condorelli G. G.¹,Favazza M.¹,Bedoya C.¹,Baeri A.¹,Anastasi G.¹,Lo Nigro R.¹,Menou N.¹,Muller C.¹,Lisoni J. G.¹,Wouters D.¹,Fragalà I. L.¹

Affiliation:

1. Dipartimento di Scienze Chimiche, Università di Catania, Via Andrea Doria 6, 95125 Catania, Italy, IMM-CNR, Stradale Primosole 50, 95121 Catania, Italy, L2MP, Laboratoire Matériaux et Microélectronique de Provence, UMR CNRS 6137, Université du Sud Toulon Var, BP 20132, F-83957 La Garde Cedex, France, and IMEC, Interuniversity MicroElectronics Center, Kapeldreef 75, B-3001 Leuven, Belgium

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm051151%2B

Reference35 articles.

1. Fatigue-free ferroelectric capacitors with platinum electrodes

2. Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD

3. Formation of SrBi2Ta2O9: Part I. Synthesis and characterization of a novel “sol-gel” solution for production of ferroelectric SrBi2Ta2O9 thin films

4. Novel fatigue-free layered structure ferroelectric thin films

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