The effect of annealing on the 0.5% Ce-doped Ba(ZrxTi1−x)O3 (BZT) thin films deposited by RF magnetron sputtering system
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference6 articles.
1. Study of the dielectric and ferroelectric properties of chemically processed BaxSr1−xTiO3 thin films
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3. Peroxo-oxalate Preparation of Doped Barium Titanate
4. Dielectric properties, leakage behaviour, and resistance degradation of thin films of the solid solution series Ba(Ti1-yZry)O3
5. Diffuse Ferroelectric Phase Transitions in Ba(Ti1-yZry)O3 Ceramics
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1. Influence of Zr/Ti ratio on the dielectric properties of BaZr x Ti1−x O3 ceramics for high-voltage capacitor applications;Journal of Materials Science: Materials in Electronics;2016-05-23
2. Influence of annealing time on microstructure and dielectric properties of (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic thin films prepared by sol–gel method;Journal of Materials Science: Materials in Electronics;2016-01-20
3. Effects of annealing temperatures on crystalline quality of silicon based (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 dielectric ceramic thin films by sol–gel process;Journal of Materials Science: Materials in Electronics;2014-10-18
4. Influence of annealing times on morphological characteristics of ceramic thin films by RF-magnetron sputtering using Zn-enriched (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic target;Journal of Materials Science: Materials in Electronics;2011-11-03
5. Effects of substrate temperatures on quality of BaO-SrO-ZnO-Nb2O5 thin films by RF-sputtering using Zn-enriched (Ba0.3Sr0.7)(Zn1/3Nb2/3)O3 ceramic target;Journal of Materials Science: Materials in Electronics;2011-10-28
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