Dielectric properties, leakage behaviour, and resistance degradation of thin films of the solid solution series Ba(Ti1-yZry)O3-Reference-Cited by-同舟云学术

Dielectric properties, leakage behaviour, and resistance degradation of thin films of the solid solution series Ba(Ti1-yZry)O3

Published:1997-09 Issue:1-4 Volume:17 Page:141-152
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Hoffmann Susanne¹,Waser Rainer M.¹

Affiliation:

1. a Institut für Werkstoffe der Elektrotechnik (IWE), RWTH Aachen University of Technology , D-52056 Aachen, Germany

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584589708012989

Reference18 articles.

1. Ferroelectric materials for 64 Mb and 256 Mb DRAMs

2. Waser , R. 1995. Sience and Technology of Electroceramic Thin Films, NATO ASI Series, Edited by: Auciello , O. and Waser , R. Vol. 284, 233Kluwer Academic Publishers.

3. Diffuse Ferroelectric Phase Transitions in Ba(Ti1-yZry)O3 Ceramics

4. The Ba(Ti,Zr)O3-(Zr,Ti)O2 Field in the Phase System BaO-TiO2-ZrO2

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