The development of Ti silicide on poly gate structures with oxidized sidewall and application in a novel RF LDMOSFET

Author:

Qu X.X,Foo P.D,Xu S.M

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. Wood A, Dragon C, Burger W. High-performance Si technology for a 2GHz power amplifier. IEDM Tech Dig 1996;4.2:87–90.

2. Ohashi H. Current, future development of high power MOS devices. IEDM Tech Dig 1999;8.5:185–209.

3. Ma G, Burger W, Dragon C. High efficiency LDMOS power FET for low voltage wireless communications. IEDM Tech Dig 1996;4.3:91–4.

4. Shuming Xu, Pangdow Foo, Jianqing Wen, Yong Liu, Fujiang Lin, Changhong Ren. RF LDMOS with extreme low parasitic feedback capacitance and high hot-carrier immunity. IEDM Tech Dig 1999;8.5:201–4.

5. Silicides for vlsi applications;Murarka,1983

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