Extremely narrow photoluminescence from the ensemble of InAsP/InP quantum dots
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. InAs self‐assembled quantum dots on InP by molecular beam epitaxy
2. Growth of self-assembled InAs and InAsxP1−x dots on InP by metalorganic vapour phase epitaxy
3. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
4. Direct correlation of structural and optical properties of InAs self-assembled dots deposited on InP(100)
5. Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
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1. InP Based Quantum Dots for Long Wavelength Emissions and Their Post-Growth Bandgap Tuning;J NANOELECTRON OPTOE;2015
2. MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES;Journal of Molecular and Engineering Materials;2013-06
3. Metal organic vapor phase epitaxy of InAsP/InP(001) quantum dots for 1.55μm applications: Growth, structural, and optical properties;Journal of Applied Physics;2008-08-15
4. Strain-induced InAsSbP islands and quantum dots grown by liquid phase epitaxy on a InAs(1 0 0) substrate;Journal of Physics D: Applied Physics;2008-07-31
5. A review of energy bandgap engineering in III–V semiconductor alloys for mid-infrared laser applications;Solid-State Electronics;2007-01
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