Helium implantation in silicon: the effects of implantation temperature-Reference-Cited by-同舟云学术

Helium implantation in silicon: the effects of implantation temperature

Published:2003-09 Issue:1-3 Volume:102 Page:222-227
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Oliviero E.,David M.L.,Fedorov A.V.,van Veen A.,Beaufort M.F.,Barbot J.F.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference13 articles.

1. Cavity formation and impurity gettering in He-implanted Si

2. Gettering of metals by voids in silicon

3. Lifetime control in silicon devices by voids induced by He ion implantation

4. Voids in Silicon by He Implantation: From Basic to Applications

5. The Stopping and Range of Ions in Solids;Ziegler,1985

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