Optimisation of a combined transient-ion-drift/rapid thermal annealing process for copper detection in silicon-Reference-Cited by-同舟云学术

Optimisation of a combined transient-ion-drift/rapid thermal annealing process for copper detection in silicon

Published:2003-09 Issue:1-3 Volume:102 Page:218-221
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Belayachi A.,Heiser T.,Schunck J.P.,Bourdais S.,Bloechl P.,Huber A.,Kempf A.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Electromigration in copper conductors

2. Transient ion drift detection of low level copper contamination in silicon

3. T. Heiser, A. Belayachi, E. Pihan, A. Kempf, S. Bourdais, P. Bloechl, A. Huber, B. Semmach, EMRS Meeting 2002, Symposium F: Defect and Impurity Engineered Semiconductor and Device III, F13.12, San Francisco, USA.

4. Transient ion-drift-induced capacitance signals in semiconductors

5. Low‐Temperature Out‐Diffusion of Cu from Silicon Wafers

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