Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions-Reference-Cited by-同舟云学术

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Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

Published:2003-06 Issue:1 Volume:100 Page:35-39
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Avrutin V.S.,Izyumskaya N.F.,Vyatkin A.F.,Zinenko V.I.,Agafonov Yu.A.,Irzhak D.V.,Roshchupkin D.V.,Steinman E.A.,Vdovin V.I.,Yugova T.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Silicon-Germanium Strained Layer Materials in Microelectronics

2. Growth-Defects and Process-Induced Defects in SiGe-Based Heterostructures

3. Needs of Low Thermal Budget Processing in SiGe Technology

4. From Relaxed GeSi Buffers to Field Effect Transistors: Current Status and Future Prospects

5. Dislocation glide and blocking kinetics in compositionally graded SiGe/Si

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanisms of dislocation generation in Si structures with strained layers: Intrinsic point defects in dislocation nucleation;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2009-08

2. Misfit dislocation generation in SiGe epitaxial layers supersaturated with intrinsic point defects;Thin Solid Films;2008-11

3. Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1−x metamorphic buffer layer for the growth of Ge layer on Si substrate;Applied Physics Letters;2007-02-19

4. The role of point defects in strain relaxation in epitaxially grown SiGe structures;Thin Solid Films;2006-06

5. Control over strain relaxation in Si-based heterostructures;Solid-State Electronics;2004-08

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