The role of point defects in strain relaxation in epitaxially grown SiGe structures-Reference-Cited by-同舟云学术

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The role of point defects in strain relaxation in epitaxially grown SiGe structures

Published:2006-06 Issue:1-2 Volume:508 Page:90-95
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Vyatkin A.F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Future applications of heterostructures

2. Theory of Dislocations;Hirth,1967

3. Relaxed SiGe buffer layer growth with point defect injection

4. Competing relaxation mechanisms in strained layers

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1. Origin of residual strain in heteroepitaxial films;Applied Physics Letters;2023-09-04

2. Synthesis of Mg₂Si_1-XGe_X solid-solution nanostructures by thermal annealing of CaSi₂ crystal powders with Ge and MgCl₂/Mg;Japanese Journal of Applied Physics;2022-12-12

3. Thickness-dependent physical and nanomechanical properties of AlxGa1−xN thin films;Materials Science in Semiconductor Processing;2022-11

4. Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE;Materials Science and Engineering: B;2021-01

5. Low temperature stacking fault nucleation and expansion from stress concentrators in 4H-SiC;Acta Materialia;2017-10

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