SEM and AFM characterisation of high-mesa patterned InP substrates prepared by wet etching
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference13 articles.
1. Non-planar and masked-area epitaxy by organometallic chemical vapour deposition
2. Lateralp‐njunction formation in GaAs molecular beam epitaxy by crystal plane dependent doping
3. Electron transport in a non-uniform magnetic field
4. The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates
5. Wet Chemical Etching with Lactic Acid Solutions for InP ‐ based Semiconductor Devices
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1. Wet Etching Study of La0.67(Sr0.5Ca0.5)0.33MnO3 Films on Silicon Substrates;Journal of Electronic Materials;2007-12-04
2. Formation of micro- and nano-striations at (211)A facets during wet etching of InP in HCl;Superlattices and Microstructures;2004-07
3. Wet-etch bulk micromachining of (100) InP substrates;Journal of Micromechanics and Microengineering;2004-06-18
4. Semiconductor surface – molecule interactions: a case study in the wet etching of InP by α-hydroxy acids;MRS Proceedings;2003
5. Hall bar device processing on patterned substrates using optical lithography;Sensors and Actuators A: Physical;2002-09
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