The morphology of InP/InGaAs grown by molecular beam epitaxy onto V-grooved InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Epitaxial Microstructure;Kapon,1994
2. Selective-area epitaxy and etching by chemical beam epitaxy
3. High efficiency and low threshold current strained V‐groove quantum‐wire lasers
4. Resharpening effect of AlAs and fabrication of quantum-wires on V-grooved substrates by molecular beam epitaxy
5. Molecular beam epitaxial growth of GaAs, AlAs and Al0.45Ga0.55As on (111) A-(001) V-grooved substrates
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of nanoscale single crystal InP membranes;Applied Physics Letters;2007-07-30
2. SEM and AFM characterisation of high-mesa patterned InP substrates prepared by wet etching;Materials Science and Engineering: B;1999-12
3. Grating overgrowth and defect structures in distributed-feedback-buried heterostructure laser diodes;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
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