Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates-Reference-Cited by-同舟云学术

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Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates

Published:1999-12 Issue:1-3 Volume:66 Page:181-184
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Michelakis C,Georgakilas A,Androulidaki M,Harteros K,Deligeorgis G,Calamiotou M,Peiro F,Bécourt N,Cornet A,Halkias G

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

2. Electroabsorption modulation in strained piezoelectric InGaAs/InP multiquantum wells operating at λ ≃ 1.55 µm

3. Optical characterizations of (111) oriented InGaAs/InAlAs strained quantum wells grown on InP substrates

4. N. Bécourt et al., unpublished work.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Formation and reduction of pyramidal hillocks on InGaAs/InP(111)A;physica status solidi (b);2015-12-02

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