Electroabsorption modulation in strained piezoelectric InGaAs/InP multiquantum wells operating at λ ≃ 1.55 µm
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19941173?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Theory of semiconductor superlattice electronic structure
2. Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs
3. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
4. Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells
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1. Observation of suppressed Auger mechanism in type-I quantum well structures with delocalized electron-hole wavefunctions;AIP Advances;2015-08
2. Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates;Materials Science and Engineering: B;1999-12
3. Intracavity piezoelectric InGaAs/GaAs laser modulator;SPIE Proceedings;1999-11-12
4. Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates;Journal of Crystal Growth;1999-05
5. Piezoelectric InGaAs/AlGaAs laser with intracavity absorber;IEE Proceedings - Optoelectronics;1999-02-01
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