Properties of silicon pulse doped InGaP layers grown by LP-MOCVD
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Ordering in GaInP grown at low temperatures
2. Effect of growth rate on the band gap of Ga0.5In0.5P
3. Ordering effects on the electrical characteristics of Ga0.5In0.5P grown by metalorganic chemical vapor deposition
4. Performance of GaxIn1−xP/GaAs heterojunctions grown by metal‐organic molecular‐beam epitaxy and metal‐organic vapor‐phase epitaxy
5. Heavy doping of silicon into Ga0.5In0.5P at low temperatures in organometallic vapor phase epitaxy
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1. On the electrical properties of Si-doped InGaP layers grown by low pressure‐metalorganic vapor phase epitaxy;Thin Solid Films;2012-08
2. Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates;Applied Physics Express;2012-02-10
3. Investigation of GaAs/InGaP superlattices for quantum well solar cells;Thin Solid Films;2008-08
4. Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE;Materials Chemistry and Physics;2000-10
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