Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Impurity free selective interdiffusion of pseudomorphic InyGa1−yAs/GaAs multiple quantum well laser and modulator structures
2. Influence of Rapid Thermal Annealing on the Properties of Strained GaInAs Quantum Well Lasers
3. Effect of growth temperature on performance of AIGaAs/lnGaAs/GaAs QW laser diodes
4. Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of in-situ Zn doping on suppression of phase separation in In Al1−As epitaxial layer on InP(001) grown by MOCVD;Journal of Alloys and Compounds;2023-09
2. Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm;Journal of Crystal Growth;2018-06
3. Investigation of the growth temperature on indium diffusion in InGaAs/GaAsP multiple quantum wells and photoelectric properties;RSC Advances;2015
4. Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures;Applied Physics Letters;2013-08-19
5. Characterization and optimization of 2-step MOVPE growth for single-mode DFB or DBR laser diodes;Journal of Crystal Growth;2011-01
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