Two dimensional boron diffusion determination by scanning capacitance microscopy
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
2. 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study
3. Microscopical aspects of boron diffusion in ultralow energy implanted silicon
4. Electrical behavior of ultra-low energy implanted boron in silicon
5. Two-dimensional profiling and size effects on the transient enhanced diffusion of ultralow-energy B implants in Si
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1. Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM);Nano Express;2021-03-01
2. Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies;Scientific Reports;2020-08-25
3. Submicron confinement effect on electrical activation of B implanted in Si;Materials Science and Engineering: B;2005-12
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