200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study-Reference-Cited by-同舟云学术

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200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

Published:1998-01 Issue:1 Volume:16 Page:327
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Current M. I.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of Copper Nanoparticles in a Thick Polyimide Film Cured by Rapid Thermal Annealing;Journal of Nanoscience and Nanotechnology;2012-04-01

2. Formation of shallow junctions through BGe molecular ion implantation and rapid thermal annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06

3. Influence of Annealing Sequence on p[sup +]/n Junction Images Studied by Scanning Capacitance Microscopy;Electrochemical and Solid-State Letters;2004

4. Two dimensional boron diffusion determination by scanning capacitance microscopy;Materials Science and Engineering: B;2002-04

5. Near-field photocurrent measurements on boron-implanted silicon;Journal of Applied Physics;2002-03-15

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