Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys-Reference-Cited by-同舟云学术

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Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys

Published:2002-02 Issue:1-3 Volume:89 Page:284-287
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Hattab A,Perrossier J.L,Meyer F,Barthula M,Osten H.J,Griesche J

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference15 articles.

1. Growth of an inverse tetragonal distorted SiGe layer on Si(001) by adding small amounts of carbon

2. Comparison of SiGe and SiGe:C heterojunction bipolar transistors

3. Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers

4. Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures

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1. Overcoming the Challenges Associated with the InN/InGaN Heterostructure via a Nanostructuring Approach for Broad Band Photodetection;ACS Applied Electronic Materials;2021-09-15

2. Impact of thermal oxidation on the electrical transport and chemical & electronic structure of the GaN film grown on Si and sapphire substrates;Applied Surface Science Advances;2021-09

3. Influence of Crystallographic Orientation on Schottky Barrier Formation in Gallium Oxide;Journal of Electronic Materials;2020-02-13

4. Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure;Journal of Applied Physics;2019-07-14

5. Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications;Epitaxy;2018-03-07

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