The effects of oxidation on the optical properties of amorphous SiC films-Reference-Cited by-同舟云学术

The effects of oxidation on the optical properties of amorphous SiC films

Published:2002-03 Issue:1-2 Volume:90 Page:47-49
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Sundaram K.B,Alizadeh Z,Chow L

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Effects of oxidation conditions on electrical properties of SiC‐SiO2interfaces

2. K. Kamimura, T. Kuroda, T. Ogawa, M. Nakao, Y. Onuma, S. Todoroki, Inst. Phys. Conf. Ser. No. 142, Ch. 3, IOP Publishing Ltd., Bristol, UK, 1995, p. 649.

3. Annealing temperature dependence of the optical properties of sputtered hydrogenated amorphous silicon carbide

4. Stress behaviour of magnetron-sputtered SiC thin films on thermal cycling and annealing

5. The Materials Science of Thin Films;Ohring,1992

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