High-resolution photoinduced transient spectroscopy as a new tool for quality assessment of semi-insulating GaAs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Deep‐level spectroscopy in high‐resistivity materials
2. Electronic properties of grown-in defects in semi-insulating GaAs
3. Investigation of defect levels in semi-insulating materials by modulated and transient photocurrent: comparison of methods
4. Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs
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1. Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation;Review of Scientific Instruments;2018-04
2. Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms;Acta Physica Polonica A;2014-04
3. Dislocation-induced electron and hole levels in InAs quantum-dot Schottky diodes;Physica E: Low-dimensional Systems and Nanostructures;2010-09
4. Photocarrier radiometric study of defect states in semi-insulating GaAs;Journal of Physics: Conference Series;2010-03-01
5. Broadening effects and ergodicity in deep level photo-thermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate- and time-domain study of defect state kinetics;Journal of Physics: Conference Series;2010-03-01
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