Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation-Reference-Cited by-同舟云学术

Comparison of methods applied in photoinduced transient spectroscopy to determining the defect center parameters: The correlation procedure and the signal analysis based on inverse Laplace transformation

Published:2018-04 Issue:4 Volume:89 Page:044702
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Suproniuk M.¹,Pawłowski M.¹,Wierzbowski M.¹,Majda-Zdancewicz E.¹,Pawłowski Ma.²

Affiliation:

1. Faculty of Electronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

2. Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5004098

Reference27 articles.

1. Deep‐level spectroscopy in high‐resistivity materials

2. Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. I. Computer Controlled Multi-Channel PICTS System with High-Resolution

3. Chapter 2 The Electrical and Photoelectronic Properties of Semi-Insulating GaAs

4. Deep center characterization by photo‐induced transient spectroscopy

5. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

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