Broadening effects and ergodicity in deep level photo-thermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate- and time-domain study of defect state kinetics-Reference-Cited by-同舟云学术

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Broadening effects and ergodicity in deep level photo-thermal spectroscopy of defect states in semi-insulating GaAs: A combined temperature-, pulse-rate- and time-domain study of defect state kinetics

Published:2010-03-01 Issue: Volume:214 Page:012001
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Mandelis Andreas,Xia Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/214/i=1/a=012001/pdf

Reference11 articles.

1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

2. Deep center characterization by photo‐induced transient spectroscopy

3. Nonexponentiality in photoinduced current transients in undoped semi‐insulating gallium arsenide

4. Deep-level transient spectroscopy (DLTS) analysis of defect levels in semiconductor alloys

5. Noncontact deep level photo-thermal spectroscopy: Technique and application to semi-insulating GaAs Wafers

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