Homogeneity evaluation of Mg implanted GaN layer by on-wafer forward diode current mapping
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference11 articles.
1. Pulsed 0.75 kW output single-ended GaN-FET amplifier for L/S band applications
2. Characteristics of low-energy BF/sub 2/- or As-implanted layers and their effect on the electrical performance of 0.15-μm MOSFET's
3. Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
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1. Si-ion implantation effects on the surface hardness and microstructure of brass alloy;Radiation Effects and Defects in Solids;2022-08-26
2. Effect of annealing time and pressure on electrical activation and surface morphology of Mg-implanted GaN annealed at 1300 °C in ultra-high-pressure nitrogen ambient;Applied Physics Express;2021-11-26
3. Impact of high-temperature implantation of Mg ions into GaN;Japanese Journal of Applied Physics;2020-05-01
4. Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis;Journal of Applied Physics;2020-03-14
5. Impact of defects on the electrical properties of p–n diodes formed by implanting Mg and H ions into N-polar GaN;Journal of Applied Physics;2019-09-28
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