Homoepitaxial silicon carbide deposition processes via chlorine routes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. Growth of SiC by ?Hot-Wall? CVD and HTCVD
2. Silicon Carbide and Related Materials 2004;Crippa,2005
3. SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
4. Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation
5. Gas-Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine-Containing Species
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