Reflectivity measurements of thin SiO2 layers in the far VUV region-Reference-Cited by-同舟云学术

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Reflectivity measurements of thin SiO2 layers in the far VUV region

Published:1987-11 Issue:1-2 Volume:261 Page:140-143
ISSN:0168-9002
Container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Author:

Klinkenberg E.-D.,Blau W.,Illinsky P.P.,Gluskin E.S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference10 articles.

1. Interferometric investigation of the SiSiO2 interregion at wavelengths of 110–130 Å

2. Isolatorphysik des SiO2;Hübner,1984

3. Optical properties of non-crystalline Si, SiO, SiOx and SiO2

4. Studies of the Si/SiO2 interface by angular dependent X-ray photoelectron spectroscopy

5. A simple system of the short-wave synchrotron radiation prevention in the 30 Å to 180 Å wavelength range

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of SiO2/Si heterostructures by soft x‐ray reflection;Journal of Applied Physics;1991-02

2. Reflectance and total photoelectric yield measurements of silicon wafers in the XUV spectral range;Semiconductor Science and Technology;1990-09-01

3. Applications of synchrotron radiation in defect and color center research;Journal of Physics and Chemistry of Solids;1990-01

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