Interferometric investigation of the SiSiO2 interregion at wavelengths of 110–130 Å
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Proc. 26. Intern. Wiss. Koll.;Hübner,1981
2. Studies of the Si/SiO2 interface by angular dependent X-ray photoelectron spectroscopy
3. Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown Oxide
4. Optical properties of non-crystalline Si, SiO, SiOx and SiO2
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1. Characterization of SiO2/Si heterostructures by soft x‐ray reflection;Journal of Applied Physics;1991-02
2. The silicon L-edge photoabsorption spectrum of silicon carbide;Journal of Physics: Condensed Matter;1989-09-18
3. Reflectivity measurements of thin SiO2 layers in the soft-X-ray region;Crystal Research and Technology;1988-09
4. Reflectivity measurements of thin SiO2 layers in the far VUV region;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1987-11
5. Theoretical study of the gradual chemical transition at the Si-SiO2 interface;physica status solidi (b);1986-06-01
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