Neutron induced defects in silicon detectors characterized by DLTS and TSC methods

Author:

Fretwurst E.,Dehn C.,Feick H.,Heydarpoor P.,Lindström G.,Moll M.,Schütze C.,Schulz T.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference32 articles.

1. The RD2 Collaboration, RD-2 Status Report, CERN/DRDC 94-34.

2. The RD20 Collaboration, RD20/STATUS REPORT, CERN/DRDC94-39.

3. Investigation on the long-term radiation hardness of low and medium resistivity starting silicon materials for RT silicon detectors in high energy physics

4. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors

5. V. Eremin et al., Detection mechanism of radiation induced defect levels in high resistivity silicon by DLTS method with preliminary filling pulse, to be published in J. Appl. Phys.

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1. Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-03

2. Numerical Simulation of 14.1 MeV Neutron Irradiation Effects on Electrical Characteristics of PIPS Detector for Plasma X-Ray Tomography;IEEE Transactions on Nuclear Science;2015-08

3. Device Simulation of Monolithic Active Pixel Sensors: Radiation Damage Effects;IEEE Transactions on Nuclear Science;2009-12

4. Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD;IEEE Transactions on Nuclear Science;2007-08

5. Radiation Hardness of CCD Vertex Detectors for the ILC;2006 IEEE Nuclear Science Symposium Conference Record;2006

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