Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Thermally stable Pd/Ge ohmic contacts ton‐type GaAs
2. Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme
3. Pt/Ti/Ge/Pd ohmic contacts to GaAs: A structural, chemical, and electrical investigation
4. Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs;Solid-State Electronics;2011-07
2. Study of the Formation Mechanism of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs;Journal of Electronic Materials;2010-11-19
3. Pd/Si/Ti/Pt ohmic contact to n-type InGaAs for AlGaAs/GaAs HBT;Materials Letters;2003-06
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