Investigation of gate leakage current in TFET: A semi-numerical approach
Author:
Funder
Arab Academy for Science, Technology and Maritime Transport
Publisher
Elsevier BV
Subject
General Engineering
Reference48 articles.
1. Source-all-around tunnel field-effect transistor (SAA-TFET): proposal and design;Shaker;Semicond. Sci. Technol.,2020
2. A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics;Karbalaei;Ain Shams Eng. J.,2021
3. A. M. Ionescu, H. Riel, Tunnel field-effect transistors as energy-efficient electronic switches, Nature 479(7373) (2011) 329-337, doi:10.1038/nature10679.
4. Performance comparison of 6T SRAM bit-cells based on side-contacted FED and CMOS;Ghafouri;Alex. Eng. J.,2020
5. Low-subthreshold-swing tunnel transistors;Zhang;IEEE Electron Device Lett,2006
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1. Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications;Journal of Electronic Materials;2024-05-24
2. Vacuum Tunneling Transistor with Nano Vacuum Chamber for Harsh Environments;ACS Nano;2023-10-06
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