A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics-Reference-Cited by-同舟云学术

A sectorial scheme of gate-all-around field effect transistor with improved electrical characteristics

Published:2021-03 Issue:1 Volume:12 Page:755-760
ISSN:2090-4479
Container-title:Ain Shams Engineering Journal
language:en
Short-container-title:Ain Shams Engineering Journal

Author:

Karbalaei Mohammad^ORCID,Dideban Daryoosh^ORCID,Heidari Hadi

Funder

University of Kashan

EPSRC

IAA

University of Glasgow

Publisher

Elsevier BV

Subject

General Engineering

Reference51 articles.

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2. Upasana RN, Gupta M, Saxena M. Simulation study for dual material gate hetero-dielectric TFET: static performance analysis for analog applications. In: 2013 Annual IEEE India Conference (INDICON); 2013.

3. Mehrad M, Ghadi ES. C-shape silicon window nano MOSFET for reducing the short channel effects. In: Joint International EUROSOI workshop and international conference on ultimate integration on silicon (EUROSOI-ULIS), 2017; 2017. p. 164–7.

4. Proper electrostatic modulation of electric field in a reliable nano-SOI with a developed channel;Anvarifard;IEEE Trans Electron Devices,2018

5. Stopping electric field extension in a modified nanostructure based on SOI technology-a comprehensive numerical study;Anvarifard;Superlattices Microstruct,2017

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