Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

Author:

Choi J.-H.,Cho C.-H.,Cha H.-Y.

Funder

MOTIE/KEIT

NRF

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference5 articles.

1. SiC and GaN wide bandgap semiconductor materials and devices;Burk;Solid-State Electron,1999

2. Recent progress in Ga2O3 power devices;Higashiwaki;Semicond Sci Technol,2016

3. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides;Varley;Phys Rev B,2012

4. Fundamentals of power semiconductor devices;Baliga,2008

5. Ghosh K, Singisett U.Impact ionization in monoclinic β-Ga2O3. arXiV:1705.09203v1 [cond-mat.mtrl-sci] 25 May 2017.

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