Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference37 articles.
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2. Present status of amorphous In–Ga–Zn–O thin-film transistors;Kamiya;Sci Technol Adv Mater,2010
3. High performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature;Lee;IEEE Electron Dev Lett,2010
4. and Chen PL. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress;Chen;Appl Phys Lett,2010
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