Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors-Reference-Cited by-同舟云学术

Study of Highly Stable Nitrogen-Doped a-InGaSnO Thin-Film Transistors

Published:2024 Issue: Volume:12 Page:502-507
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Zhang Wenyang¹^ORCID,Lu Li¹,Li Chenfei¹,Jiang Weijie¹,Wang Wenzhao¹^ORCID,Liu Xingqiang²^ORCID,Abliz Ablat³,Wan Da¹^ORCID

Affiliation:

1. School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, China

2. State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, China

3. School of Physics and Technology, Xinjiang University, Ürümqi, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of Ministry of Science and Technology

China National Funds for Distinguished Young Scientists

Tianshan Talent Innovation and Technology Cultivation Project Foundation of Xinjiang Uygur Autonomous Region

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/6245494/10416702/10587190.pdf?arnumber=10587190

Reference35 articles.

1. Transparent thin-film transistors with zinc indium oxide channel layer

2. Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers With Quantum Well Structures

3. Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

4. High-Mobility Solution-Processed Amorphous Indium Zinc $\hbox{Oxide/In}_{2}\hbox{O}_{3}$ Nanocrystal Hybrid Thin-Film Transistor

5. In-situ Ar plasma treatment as a low thermal budget technique for high performance InGaSnO thin film transistors fabricated using magnetron sputtering