Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors-Reference-Cited by-同舟云学术

Development of advanced plasma process with an optical emission spectroscopy-based end-point technique for etching of AlGaAs over GaAs in manufacture of heterojunction bipolar transistors

Published:2002-05 Issue:5 Volume:46 Page:773-775
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee J.W.,Jeon M.H.,Cho G.S.,Yim H.C.,Chang S.K.,Kim K.K.,Devre M.,Johnson D.,Sasserath J.N.,Pearton S.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

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2. Asbeck PM. In: Sze SM, editor. high-speed semiconductor devices, Wiley, NY 1990 [chapter 6]

3. Selective dry etching of InGaP over GaAs in inductively coupled plasmas;Leerungnawarat;J. Electron. Mater.,2000

4. Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas;Lee;J. Vac. Sci. Technol. A,2000

5. Equal rate and anisotropic reactive ion etching of GaAs/AlGaAs heterostructures in SiCl4 plasma;Salimian;J. Electrochem. Soc.,1989

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