Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors-Reference-Cited by-同舟云学术

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Comparison of the effects of H2 and D2 plasma exposure on AlGaAs/GaAs high electron mobility transistors

Published:2001-09 Issue:9 Volume:45 Page:1613-1624
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Luo B.,Ren F.,Lee K.P.,Pearton S.J.,Wu C.-S.,Kopf R.F.,Johnson D.,Sasserah J.N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Lee JW, Ren F. In: Shul RJ, Pearton SJ, editors. Handbook of advanced plasma processing techniques. Berlin: Springer; 2000

2. Temperature dependent electron cyclotron resonance etching of InP, GaP, and GaAs

3. Plasma-induced damage of GaAs pn-junction diodes using electron cyclotron resonance generated Cl2/Ar, BCl3/Ar, Cl2/BCl3/Ar, and SiCl4/Ar plasmas

4. Plasma passivation of etch-induced surface damage on GaAs

5. Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

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1. Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-01

2. Promotion Effect of the Nonthermal RF Plasma Treatment on Ni/Al2O3 for Benzene Hydrogenation;Industrial & Engineering Chemistry Research;2005-11-02

3. Effect of hydrogen on modulation-doped AlGaAs/InGaAs/GaAs heterostructures: a photoluminescence study;Solid State Communications;2004-12

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