Author:
Kim Jeong Hoon,Song Jong-In
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. Role of misfit dislocations on pseudomorphic high electron mobility transistors;Meshkinpour;Appl Phys Lett,1995
2. Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction of growth area;Fitzgerald;J Appl Phys,1989
3. Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy;Li;Appl Phys Lett,1991
4. Kim SS, Jo SJ, Song J-I. Characteristics of highly strained InGaP/InGaAs pseudomorphic high electron mobility transistors grown on patterned GaAs substrates. ISCS2000 Technical Digest, October 2000, Monterey, CA
5. Iqbal M, Lee J, Kim K. Performance comparison of digital modulation schemes with respect to phase noise spectral shape. IEEE CCECE2000 Technical Digest, May 2000, p. 856–60
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献