Improved performance of strained InGaAs/GaAs photodiodes grown on patterned GaAs substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105049
Reference7 articles.
1. Molecular beam epitaxy of GaAs/AlGaAs superlattice heterostructures on nonplanar substrates
2. High‐power fundamental mode AlGaAs quantum well channeled substrate laser grown by molecular beam epitaxy
3. Stimulated emission in semiconductor quantum wire heterostructures
4. Problems related to the formation of lateral p–n junctions on channeled substrate (100) GaAs for lasers
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1. Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness;IEEE Transactions on Electron Devices;2002-03
2. Low-frequency noise characteristics of highly-strained In0.5Ga0.5P/In0.33Ga0.67As pseudomorphic high electron mobility transistor;Solid-State Electronics;2001-09
3. Highly strained InGaP/InGaAs p-HEMT using reduced area growth;IEEE Electron Device Letters;2001-02
4. Improved microwave and noise performances of InGaP/In0.33Ga0.67As p-HEMT grown on patterned GaAs substrate;Electronics Letters;2001
5. Design and realization of a 1.55-μm patterned vertical cavity surface emitting laser with lattice-mismatched mirror layers;Journal of Lightwave Technology;1999
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