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Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures

  • Published:2001-07 Issue:7 Volume:45 Page:1149-1152
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Luo B.,Johnson J.W.,Schoenfeld D.,Pearton S.J.,Ren F.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Atomic-Scale Simulation for Pseudometallic Defect-Generation Kinetics and Effective NIEL in GaN;IEEE Transactions on Nuclear Science;2018-05

2. Review—Ionizing Radiation Damage Effects on GaN Devices;ECS Journal of Solid State Science and Technology;2015-11-24

3. Oxygen ion irradiation on AlGaN/GaN heterostructure grown on silicon substrate by MOCVD method;AIP Conference Proceedings;2015

4. Review of radiation damage in GaN-based materials and devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

5. Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose;Microelectronic Engineering;2010-11
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